InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

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2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells.In particular, indium gallium arsenide on insulator technology essie day drift away is selected to verify the viability of III-V meta-stable-dip RAM cells.The cell performance dependence on several parameters (such as the back-gate voltage, semiconductor thickness, indium/gallium mole fraction or interface traps) and simulation models (like ballisticity or spatial quantum confinement) is analyzed and red prairie spy apple commented.

Functional cells are presented and compared with analogous silicon 1T-DRAM memories to highlight the advantages and drawbacks.