DETERMINATION OF THE REGION OF THE LIMITING STATES OCCURRENCE IN RVS-20000 WITH THE SUBSIDENCE OF THE EXTERNAL BOTTOM CONTOUR

Determination of the region of the limiting states occurrence in RVS-20000 with the subsidence of the external bottom contour

The problem of wd ultrastar dc hc530 the limiting states occurrence in the structures of a vertical steel tank is investigated in this work.To study the SSS of the metal structures of the object, the authors created a numerical model of the RVS-20000 tank in the ANSYS software complex.The model considers the maximum number of elements with their ge

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InGaAs Capacitor-Less DRAM Cells TCAD Demonstration

2D numerical TCAD simulations are used to infer the behavior of III-V capacitor-less dynamic RAM (DRAM) cells.In particular, indium gallium arsenide on insulator technology essie day drift away is selected to verify the viability of III-V meta-stable-dip RAM cells.The cell performance dependence on several parameters (such as the back-gate voltage,

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